Open AccessCoherent V{sub 2}O{sub 3} precipitates in {alpha}-Al{sub 2}O{sub 3} co-implanted with vanadium and oxygen
Author(s) -
L. Gea,
L. A. Boatner,
Judit Budai,
Janet Rankin
Publication year - 1994
Language(s) - English
Resource type - Reports
DOI - 10.2172/28366
Subject(s) - vanadium , sapphire , annealing (glass) , materials science , analytical chemistry (journal) , epitaxy , oxygen , ion implantation , crystallography , ion , chemistry , metallurgy , nanotechnology , optics , physics , laser , organic chemistry , chromatography , layer (electronics)
The oxides of vanadium VO{sub 2} and V{sub 2}O{sub 3} are of fundamental and practical interest since they undergo structural phase transitions during which large variations in their optical and electronic properties are observed. In the present work, the authors report the formation of buried precipitates of V{sub 2}O{sub 3} in sapphire by ion implantation and thermal annealing. It was found that the co-implantation of oxygen and vanadium was required in order to form nanophase V{sub 2}O{sub 3} precipitates. Additionally, these precipitates, which formed only following an anneal of the co-implanted sample under reducing conditions, are coherent with the sapphire lattice. Two epitaxial relationships were observed: (0001)V{sub 2}O{sub 3}//(0001) {alpha}-Al{sub 2}O{sub 3} and (11--20)V{sub 2}O{sub 3}//(0001) {alpha}-Al{sub 2}O{sub 3}. This finding is in agreement with results obtained elsewhere for thin films of V{sub 2}O{sub 3} deposited on c-axis-oriented sapphire