Open AccessChemical and electrical properties of cavities in silicon and germanium
Author(s) -
S. M. Myers,
D. M. Follstaedt,
G. A. Petersen,
C. H. Seager,
H. J. Stein,
W.R. Wampler
Publication year - 1994
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/28206
Subject(s) - chemisorption , germanium , impurity , silicon , annealing (glass) , getter , dissociation (chemistry) , materials science , chemical bond , transition metal , atomic physics , chemical physics , chemistry , adsorption , optoelectronics , metallurgy , catalysis , physics , biochemistry , organic chemistry
Cavities were formed in Si and Ge by He ion implantation and annealing, and resultant chemical and electrical properties were investigated. The dissociation energies for Si-H and Ge-H surface monohydride bonds were determined, showing that H chemisorption on Si is energetically stable with respect H{sub 2} gas whereas H chemisorption on Ge is not. Cavity walls in Si were found to trap transition metals strongly, suggesting application to impurity gettering in devices. Measurement and modeling of cavity electrical properties elucidated surface electronic states and indicated a potential for controlled electrical isolation in devices. 35 refs
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