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Precision optical aspheres for extreme ultraviolet lithography
Author(s) -
D. Kania,
D. P. Gaines,
D.S. Sweeney,
Gary E. Sommargren,
Bruno La Fontaine,
S. P. Ver,
D.A. Tichnor,
J. E. Bjorkholm,
F. Zernike,
Robert Kestner
Publication year - 1996
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/281722
Subject(s) - extreme ultraviolet lithography , lithography , extreme ultraviolet , optics , diffraction , ultraviolet , materials science , photolithography , throughput , optoelectronics , x ray lithography , physics , resist , computer science , nanotechnology , telecommunications , laser , layer (electronics) , wireless
We have demonstrated significant advances in the production of aspheric optics for extreme ultraviolet lithography. An optic has been fabricated with an aspheric departure of 1.5 {mu}m, a figure error of 0.7 nm rms and a nanoroughness of 0.25 nm rms. Further improvements are required in the figure and nanoroughness to reach high throughput and near diffraction limited performance in an EUVL system. 8 refs., 2 figs

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