Open AccessParametric study of compound semiconductor etching utilizing inductively coupled plasma source
Author(s) -
C Constantine,
D Johnson,
C. Barratt
Publication year - 1996
Language(s) - English
Resource type - Reports
DOI - 10.2172/266733
Subject(s) - inductively coupled plasma , etching (microfabrication) , wafer , materials science , electron cyclotron resonance , optoelectronics , reactive ion etching , plasma etching , plasma , fabrication , semiconductor , analytical chemistry (journal) , chemistry , nanotechnology , layer (electronics) , physics , medicine , alternative medicine , quantum mechanics , pathology , chromatography
Inductively Coupled Plasma (ICP) sources are extremely promising for large-area, high-ion density etching or deposition processes. In this review the authors compare results for GaAs and GaN etching with both ICP and Electron Cyclotron Resonance (ECR) sources on the same single-wafer platform. The ICP is shown to be capable of very high rates with excellent anisotropy for fabrication of GaAs vias or deep mesas in GaAs or GaN waveguide structures