Parametric study of compound semiconductor etching utilizing inductively coupled plasma source | Zendy

C. Constantine | Zendy; D. Johnson | Zendy; C. Barratt | Zendy

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Parametric study of compound semiconductor etching utilizing inductively coupled plasma source

Author(s) -

C. Constantine,

D. Johnson,

C. Barratt

Publication year - 1996

Language(s) - English

Resource type - Reports

DOI - 10.2172/266733

Subject(s) - inductively coupled plasma , etching (microfabrication) , wafer , materials science , electron cyclotron resonance , optoelectronics , reactive ion etching , plasma etching , plasma , fabrication , semiconductor , analytical chemistry (journal) , chemistry , nanotechnology , layer (electronics) , physics , medicine , alternative medicine , quantum mechanics , pathology , chromatography

Inductively Coupled Plasma (ICP) sources are extremely promising for large-area, high-ion density etching or deposition processes. In this review the authors compare results for GaAs and GaN etching with both ICP and Electron Cyclotron Resonance (ECR) sources on the same single-wafer platform. The ICP is shown to be capable of very high rates with excellent anisotropy for fabrication of GaAs vias or deep mesas in GaAs or GaN waveguide structures

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