Open AccessDeposition of hetero-epitaxial In{sub 2}O{sub 3} thin films by molecular beam epitaxy
Author(s) -
Naoaki Taga,
Mikako Maekawa,
Yuzo Shigesato,
Itaru Yasui,
T. E. Haynes
Publication year - 1996
Language(s) - English
Resource type - Reports
DOI - 10.2172/257414
Subject(s) - epitaxy , molecular beam epitaxy , deposition (geology) , thin film , materials science , optoelectronics , nanotechnology , geology , layer (electronics) , paleontology , sediment
Highly oriented thin film In{sub 2}O{sub 3} was heteroepitaxially grown on optically polished (100) plane of single crystalline yttria stabilized zirconia (YSZ) substrate using Molecular Beam Epitaxy (MBE). Full-width at half-maximum (FWHM) of X-ray rocking-curve showed 0.08{degree} for In{sub 2}O{sub 3} 200 nm thick layers indicating that excellent uniformity orientation compared with the heteroepitaxially-grown In{sub 2}O{sub 3} epitaxially deposited by the conventional methods such as electron-beam (e-beam) evaporation or sputtering method. The minimum yield ({chi}{sub min}) of the MBE grown in In{sub 2}O{sub 3} film of Rutherford Backscattering Spectrometry (RBS) was also extremely small value 3.1%, implying the very high crystallinity