Microwave annealing of ion implanted 6H-SiC | Zendy

Jason A. Gardner | Zendy; Mulpuri V. Rao | Zendy; Yushun Tian | Zendy; O. W. Holland | Zendy; G. Kelner | Zendy; J. A. Freitas | Zendy; Iftikhar Ahmad | Zendy

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Microwave annealing of ion implanted 6H-SiC

Author(s) -

Jason A. Gardner,

Mulpuri V. Rao,

Yushun Tian,

O. W. Holland,

G. Kelner,

J. A. Freitas,

Iftikhar Ahmad

Publication year - 1996

Publication title -

osti oai (u.s. department of energy office of scientific and technical information)

Language(s) - English

Resource type - Reports

DOI - 10.2172/244606

Subject(s) - van der pauw method , annealing (glass) , ion implantation , materials science , dopant , ion , photoluminescence , analytical chemistry (journal) , microwave , hall effect , doping , chemistry , optoelectronics , metallurgy , electrical resistivity and conductivity , electrical engineering , physics , organic chemistry , chromatography , quantum mechanics , engineering

Microwave rapid thermal annealing has been utilized to remove the lattice damage caused by nitrogen (N) ion-implantation as well as to activate the dopant in 6H-SiC. Samples were annealed at temperatures as high as 1,400 C, for 10 min. Van der Pauw Hall measurements indicate an implant activation of 36%, which is similar to the value obtained for the conventional furnace annealing at 1,600 C. Good lattice quality restoration was observed in the Rutherford backscattering and photoluminescence spectra

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