Open AccessGrowth of silicon carbide on silicon via reaction of sublimed fullerenes and silicon
Author(s) -
Amir Hamza,
M. Balooch
Publication year - 1996
Language(s) - English
Resource type - Reports
DOI - 10.2172/231594
Subject(s) - silicon , materials science , auger electron spectroscopy , sublimation (psychology) , epitaxy , silicon carbide , nanocrystalline silicon , x ray photoelectron spectroscopy , low energy electron diffraction , substrate (aquarium) , electron diffraction , analytical chemistry (journal) , chemical engineering , crystallography , nanotechnology , crystalline silicon , optoelectronics , chemistry , composite material , diffraction , amorphous silicon , optics , organic chemistry , psychotherapist , oceanography , engineering , psychology , layer (electronics) , nuclear physics , physics , geology
Epitaxial silicon carbide films are grown on Si(100) substrates at a surface temperature of 1,200 K via fullerene precursors. Films have been grown up to a thickness of 2,500 {angstrom}. The growth rate of the SiC film is not limited by the surface reaction rate of fullerene with silicon at these temperatures, rather by the arrival rate of the reactants Si (by diffusion from substrate or from gas phase) or fullerene. This results in rapid film growth. Films have been characterized by low energy electron diffraction, ultraviolet photoelectron spectroscopy and Auger electron spectroscopy. Stoichiometric, epitaxial SiC films are grown. Supply of silicon to the growing SiC surface via sublimation greatly reduces the tendency for silicon diffusion to form voids at the Si/SiC interface