Open AccessIon implantation in compound semiconductors for high-performance electronic devices
Author(s) -
J.C. Zolper,
Albert G. Baca,
M.E. Sherwin,
John F. Klem
Publication year - 1996
Language(s) - English
Resource type - Reports
DOI - 10.2172/231550
Subject(s) - compound semiconductor , semiconductor , ion , materials science , optoelectronics , ion implantation , engineering physics , nanotechnology , chemistry , physics , epitaxy , organic chemistry , layer (electronics)
Advanced electronic devices based on compound semiconductors often make use of selective area ion implantation doping or isolation. The implantation processing becomes more complex as the device dimensions are reduced and more complex material systems are employed. The authors review several applications of ion implantation to high performance junction field effect transistors (JFETs) and heterostructure field effect transistors (HFETs) that are based on compound semiconductors, including: GaAs, AlGaAs, InGaP, and AlGaSb