Defect formation and carrier doping in epitaxial films of the infinite layer compound | Zendy

R. M. Feenstra | Zendy; S.J. Pennycook | Zendy; Matthew F. Chisholm | Zendy

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Defect formation and carrier doping in epitaxial films of the infinite layer compound

Author(s) -

R. M. Feenstra,

S.J. Pennycook,

Matthew F. Chisholm

Publication year - 1996

Publication title -

osti oai (u.s. department of energy office of scientific and technical information)

Language(s) - English

Resource type - Reports

DOI - 10.2172/219355

Subject(s) - doping , epitaxy , scanning tunneling microscope , materials science , annealing (glass) , molecular beam epitaxy , transmission electron microscopy , oxidizing agent , crystallography , scanning electron microscope , layer (electronics) , analytical chemistry (journal) , optoelectronics , chemistry , nanotechnology , organic chemistry , composite material

The correlation between defect formation and carrier doping in epitaxial films of the infinite layer compound SrCuO{sub 2} has been studied via molecular beam epitaxy controlled layer-by-layer growth experiments, chemically resolved scanning transmission electron microscopy, scanning tunneling microscopy, x-ray diffraction, electrical transport measurements, and post-growth oxidation-reduction annealing. Based on the complementary information provided by these experiments, it is concluded that the carrier doping is dominated by the formation of an electron-doped, Sr and O deficient matrix under mildly oxidizing growth conditions. Hole-doping is induced by extended defects containing excess Sr atoms and may lead to superconductivity after high-temperature oxidation

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