Open AccessNanocrystals and quantum dots formed by high-dose ion implantation
Author(s) -
C. W. White,
J. D. Budai,
J. G. Zhu,
S. P. Withrow,
D. M. Hembree,
D. O. Henderson,
Akiko Ueda,
Y. S. Tung,
R. Mu
Publication year - 1996
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/219351
Subject(s) - nanocrystal , quantum dot , materials science , photoluminescence , amorphous solid , ion implantation , annealing (glass) , semiconductor , nanotechnology , ion , chemical engineering , optoelectronics , crystallography , chemistry , metallurgy , organic chemistry , engineering
High-dose ion implantation was used to synthesize a wide range of nanocrystals and quantum dots and to encapsulate them in host materials such as SiO{sub 2}, {alpha}-Al{sub 2}O{sub 3}, and crystalline Si. When Si nanocrystals are encapsulated in SiO{sub 2}, they exhibit dose dependent absorption and photoluminescence which provides insight into the luminescence mechanism. Compound semiconductor nanocrystals (both Group III-V and Group II-VI) can be formed in these matrices by sequential implantation of he individual constituents, and we discuss their synthesis and some of their physical and optical properties
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