Open AccessDocumentation concerning KKP development work
Author(s) -
S. N. Dixit,
Ian Thomas,
M. C. Rushford,
Robb Merrill
Publication year - 1994
Language(s) - English
Resource type - Reports
DOI - 10.2172/197747
Subject(s) - hydrofluoric acid , fabrication , optics , etching (microfabrication) , aperture (computer memory) , materials science , field (mathematics) , optoelectronics , nanotechnology , engineering , physics , mechanical engineering , medicine , alternative medicine , mathematics , pathology , layer (electronics) , pure mathematics , metallurgy
Fabrication has been completed on a 16 level KPP on a 5-inch diameter aperture fused silica using lithographic techniques and wet etching of fused silica in a buffered hydrofluoric acid solution. The experimentally measured far-field intensity pattern displays the desired top-hat envelope and has a superimposed speckle on it. The far-field contains 90% of the incident energy inside the 640 {mu}m region. This is a significant improvement over the binary RPP`s in terms of the far-field profile control and energy concentration. Sources contributing to the energy loss are identified and efforts are underway to overcome these limitations
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