z-logo
open-access-imgOpen Access
Documentation concerning KKP development work
Author(s) -
S. Dixit,
Ian M. Thomas,
M. C. Rushford,
Robb Merrill
Publication year - 1994
Language(s) - English
Resource type - Reports
DOI - 10.2172/197747
Subject(s) - hydrofluoric acid , fabrication , optics , etching (microfabrication) , aperture (computer memory) , materials science , field (mathematics) , optoelectronics , nanotechnology , engineering , physics , mechanical engineering , medicine , alternative medicine , mathematics , pathology , layer (electronics) , pure mathematics , metallurgy
Fabrication has been completed on a 16 level KPP on a 5-inch diameter aperture fused silica using lithographic techniques and wet etching of fused silica in a buffered hydrofluoric acid solution. The experimentally measured far-field intensity pattern displays the desired top-hat envelope and has a superimposed speckle on it. The far-field contains 90% of the incident energy inside the 640 {mu}m region. This is a significant improvement over the binary RPP`s in terms of the far-field profile control and energy concentration. Sources contributing to the energy loss are identified and efforts are underway to overcome these limitations

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here