Advanced radiation detector development: Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Annual progress report, September 30, 1994--September 29, 1995

The advanced detector development project at the University of Michigan has completed the first full year of its current funding. The general goals are the development of radiation detectors and spectrometers that are capable of portable room temperature operation. Over the past 12 months, the authors have worked primarily in the development of semiconductor spectrometers with ``single carrier`` response that offer the promise of room temperature operation and good energy resolution in gamma ray spectroscopy. They have also begun a small scale effort at investigating the properties of a small non-spectroscopic detector system with directional characteristics that will allow identification of the approximate direction in which gamma rays are incident. These activities have made use of the extensive clean room facilities at the University of Michigan for semiconductor device fabrication, and also the radiation measurement capabilities provided in the laboratory in the Phoenix Building on the North Campus