Results of a pilot study and a proposal to build a high current pulsed nanosecond low energy Si ion beam for the detection of trace amounts of heavy impurities in silicon | Zendy

Finn M. Jacobsen | Zendy; M. J. Zarcone | Zendy; D. Steski | Zendy; K.F. Smith | Zendy; P. Thieberger | Zendy; K. G. Lynn | Zendy; J. Throwe | Zendy; M. Cholewa | Zendy

Open Access

Results of a pilot study and a proposal to build a high current pulsed nanosecond low energy Si ion beam for the detection of trace amounts of heavy impurities in silicon

Author(s) -

Finn M. Jacobsen,

M. J. Zarcone,

D. Steski,

K.F. Smith,

P. Thieberger,

K. G. Lynn,

J. Throwe,

M. Cholewa

Publication year - 1996

Publication title -

osti oai (u.s. department of energy office of scientific and technical information)

Language(s) - English

Resource type - Reports

DOI - 10.2172/188613

Subject(s) - nanosecond , impurity , silicon , materials science , beam (structure) , current (fluid) , ion , optoelectronics , ion beam , atomic physics , analytical chemistry (journal) , chemistry , electrical engineering , optics , physics , engineering , laser , organic chemistry , chromatography

Next generations of Very Large Scale Integrated circuits will require impurity contamination below 10{sup 8} atoms/cm. To detect such small quantities at or near the surface, new techniques have to be developed. The authors propose to build a high current nanosecond pulsed Si ion beam which can detect such small quantities of heavy impurities with a high mass resolution. A pilot study shows that the approach can be used to detect impurities in silicon below the 10{sup 7} atoms/cm{sup 2} level

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