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Optimization of transparent and reflecting electrodes for amorphous silicon solar cells. Annual subcontract report, April 1, 1994--March 31, 1995
Author(s) -
Roy G. Gordon
Publication year - 1995
Language(s) - English
Resource type - Reports
DOI - 10.2172/135071
Subject(s) - materials science , zinc , titanium nitride , nitride , amorphous solid , tin , tin oxide , electrode , diffusion barrier , doping , optoelectronics , inorganic chemistry , layer (electronics) , nanotechnology , metallurgy , chemistry , organic chemistry
Transparent and reflecting electrodes are important parts of the structure of amorphous silicon solar cells. We report improved methods for depositing zinc oxide, deposition of tin nitride as a potential reflection-enhancing diffusion barrier between the a-Si and back metal electrodes. Highly conductive and transparent fluorine-doped zinc oxide was successfully produced on small areas by atmospheric pressure CVD from a less hazardous zinc precursor, zinc acetylacetonate. The optical properties measured for tin nitride showed that the back-reflection would be decreased if tin nitride were used instead of zinc oxide as a barrier layer over silver on aluminum. Niobium-doped titanium dioxide was produced with high enough electrical conductivity so that normal voltages and fill factors were obtained for a-Si cells made on it

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