Open AccessMonte Carlo simulations of solid-state photoswitches
Author(s) -
P. W. Rambo,
J. Denavit
Publication year - 1995
Language(s) - English
Resource type - Reports
DOI - 10.2172/123236
Subject(s) - monte carlo method , semiconductor , laser , physics , microwave , semiconductor device , plasma , field (mathematics) , materials science , photoionization , electron , computational physics , optoelectronics , atomic physics , optics , ion , nanotechnology , ionization , quantum mechanics , statistics , mathematics , layer (electronics) , pure mathematics
Large increases in conductivity induced in GaAs and other semiconductors by photoionization allow fast switching by laser light with applications to pulse-power technology and microwave generation. Experiments have shown that under high-field conditions (10 to 50 kV/cm), conductivity may occur either in the linear mode where it is proportional to the absorbed light, in the {open_quotes}lock-on{close_quotes} mode, where it persists after termination of the laser pulse or in the avalanche mode where multiple carriers are generated. We have assembled a self-consistent Monte Carlo code to study these phenomena and in particular to model hot electron effects, which are expected to be important at high field strengths. This project has also brought our expertise acquired in advanced particle simulation of plasmas to bear on the modeling of semiconductor devices, which has broad industrial applications