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Electrically Injected UV-Visible Nanowire Lasers
Author(s) -
George T. Wang,
Changyi Li,
Qiming Li,
Sheng Liu,
Jeremy B. Wright,
Igal Brener,
Ting Luk,
Weng W. Chow,
Benjamin Leung,
Jeffrey J. Figiel,
Daniel Koleske,
TzuMing Lu
Publication year - 2015
Language(s) - English
Resource type - Reports
DOI - 10.2172/1222989
Subject(s) - lasing threshold , nanowire , optoelectronics , materials science , laser , heterojunction , semiconductor laser theory , semiconductor , wavelength , optics , physics
There is strong interest in minimizing the volume of lasers to enable ultracompact, low-power, coherent light sources. Nanowires represent an ideal candidate for such nanolasers as stand-alone optical cavities and gain media, and optically pumped nanowire lasing has been demonstrated in several semiconductor systems. Electrically injected nanowire lasers are needed to realize actual working devices but have been elusive due to limitations of current methods to address the requirement for nanowire device heterostructures with high material quality, controlled doping and geometry, low optical loss, and efficient carrier injection. In this project we proposed to demonstrate electrically injected single nanowire lasers emitting in the important UV to visible wavelengths. Our approach to simultaneously address these challenges is based on high quality III-nitride nanowire device heterostructures with precisely controlled geometries and strong gain and mode confinement to minimize lasing thresholds, enabled by a unique top-down nanowire fabrication technique.

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