Channeling, Volume Reection and Gamma Emission Using 14GeV Electrons in Bent Silicon Crystals
Author(s) -
Brandon Benson
Publication year - 2015
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/1213166
Subject(s) - undulator , physics , electron , bremsstrahlung , synchrotron radiation , bent molecular geometry , photon , gamma ray , silicon , monocrystalline silicon , optics , atomic physics , nuclear physics , materials science , optoelectronics , composite material
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