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High quality Si/SiGe quantum well samples have provided an ideal platform to study the electron-electron (ee) interactions in two-dimensional electron systems (2DES). Currently, the sample mobility has surpassed 106 cm2/Vs and very low carrier densities are realized, which are crucial to reveal strong e-e interactions

Tilt Magnetic Field Studies of Quantum Hall Effect in a High Quality Si/SiGe Quantum Well