Tilt Magnetic Field Studies of Quantum Hall Effect in a High Quality Si/SiGe Quantum Well | Zendy

Xiaoyan Shi | Zendy; TzuMing Lu | Zendy; W. Pan | Zendy; S.-H. Huang | Zendy; C. W. Liu | Zendy; J. Li | Zendy

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Tilt Magnetic Field Studies of Quantum Hall Effect in a High Quality Si/SiGe Quantum Well

Author(s) -

Xiaoyan Shi,

TzuMing Lu,

W. Pan,

S.-H. Huang,

C. W. Liu,

J. Li

Publication year - 2015

Language(s) - English

Resource type - Reports

DOI - 10.2172/1177371

Subject(s) - condensed matter physics , tilt (camera) , quantum hall effect , magnetic field , electron , quantum well , quality (philosophy) , electron mobility , materials science , ideal (ethics) , quantum , magnetoresistance , physics , quantum mechanics , engineering , political science , laser , mechanical engineering , law

High quality Si/SiGe quantum well samples have provided an ideal platform to study the electron-electron (ee) interactions in two-dimensional electron systems (2DES). Currently, the sample mobility has surpassed 106 cm2/Vs and very low carrier densities are realized, which are crucial to reveal strong e-e interactions

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