Open AccessEnhancement of Radiative Efficiency with Staggered InGaN Quantum Well Light Emitting Diodes
Author(s) -
Nelson Tansu,
Volkmar Dierolf,
G. S. Huang,
S. Tafon Penn,
Hongyu Zhao,
Guangyu Li,
Xiaohang Li,
Jonathan D. Poplawsky
Publication year - 2011
Language(s) - English
Resource type - Reports
DOI - 10.2172/1110811
Subject(s) - light emitting diode , optoelectronics , radiative transfer , quantum efficiency , quantum , diode , work (physics) , materials science , engineering physics , computer science , physics , optics , quantum mechanics
The technology on the large overlap InGaN QWs developed in this program is currently implemented in commercial technology in enhancing the internal quantum efficiency in major LED industry in US and Asia. The scientific finding from this work supported by the DOE enabled the implementation of this step-like staggered quantum well in the commercial LEDs