Total dose and dose rate models for bipolar transistors in circuit simulation. | Zendy

Phillip Campbell | Zendy; Steven D. Wix | Zendy

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Total dose and dose rate models for bipolar transistors in circuit simulation.

Author(s) -

Phillip Campbell,

Steven D. Wix

Publication year - 2013

Publication title -

osti oai (u.s. department of energy office of scientific and technical information)

Language(s) - English

Resource type - Reports

DOI - 10.2172/1088097

Subject(s) - bipolar junction transistor , dose rate , transistor , radiation , charge (physics) , materials science , voltage , optoelectronics , physics , electrical engineering , engineering , optics , medical physics , quantum mechanics

The objective of this work is to develop a model for total dose effects in bipolar junction transistors for use in circuit simulation. The components of the model are an electrical model of device performance that includes the effects of trapped charge on device behavior, and a model that calculates the trapped charge densities in a specific device structure as a function of radiation dose and dose rate. Simulations based on this model are found to agree well with measurements on a number of devices for which data are available.

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