Open AccessSiC Power MOSFET with Improved Gate Dielectric
Author(s) -
Nick M. Sbrockey,
Gary S. Tompa,
Michael G. Spencer,
Chandra M.V. S. Chandrashekhar
Publication year - 2010
Language(s) - English
Resource type - Reports
DOI - 10.2172/1067486
Subject(s) - silicon carbide , mosfet , materials science , optoelectronics , transistor , engineering physics , power semiconductor device , wide bandgap semiconductor , electrical engineering , power mosfet , semiconductor , dielectric , field effect transistor , gate dielectric , gate oxide , engineering , voltage , metallurgy
In this STTR program, Structured Materials Industries (SMI), and Cornell University are developing novel gate oxide technology, as a critical enabler for silicon carbide (SiC) devices. SiC is a wide bandgap semiconductor material, with many unique properties. SiC devices are ideally suited for high-power, highvoltage, high-frequency, high-temperature and radiation resistant applications. The DOE has expressed interest in developing SiC devices for use in extreme environments, in high energy physics applications and in power generation. The development of transistors based on the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure will be critical to these applications
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