Open AccessWide Bandgap Extrinsic Photoconductive Switches
Author(s) -
J. Sullivan
Publication year - 2012
Language(s) - English
Resource type - Reports
DOI - 10.2172/1034509
Subject(s) - photoconductivity , optoelectronics , semiconductor , materials science , band gap , semiconductor device , wide bandgap semiconductor , voltage , high voltage , electrical engineering , nanotechnology , engineering , layer (electronics)
Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN