Open AccessThe structural, chemical, and electrical properties of He-implantation-induced nanocavities in silicon
Author(s) -
C. H. Seager,
S. M. Myers,
D.M. Follstaedt,
H. J. Stein,
W.R. Wampler
Publication year - 1993
Language(s) - English
Resource type - Reports
DOI - 10.2172/10194006
Subject(s) - silicon , acceptor , materials science , annealing (glass) , impurity , crystallographic defect , getter , ion implantation , optoelectronics , dangling bond , nanotechnology , crystallography , chemistry , condensed matter physics , ion , composite material , physics , organic chemistry
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