Temperature dependence of the radiation induced change of depletion voltage in silicon PIN detectors | Zendy

H. J. Ziock | Zendy; K. Holzscheiter | Zendy; A.N. Morgan | Zendy; A. P. T. Palounek | Zendy; J. Ellison | Zendy; A. P. Heinson | Zendy; Mark E. Mason | Zendy; Stephen Wimpenny | Zendy; E. Barberis | Zendy; N. Cartiglia | Zendy; A. A. Grillo | Zendy; K.F. O'Shaughnessy | Zendy; J. T. Rahn | Zendy; Paolo Rinaldi | Zendy; W.A. Rowe | Zendy; H. F-W. Sadrozinski | Zendy; A. Seiden | Zendy; E. Spencer | Zendy; A. Webster | Zendy; R. Wichmann | Zendy; M. Wilder | Zendy; M. Frautschi | Zendy; J. Matthews | Zendy; Donald McDonald | Zendy; Donald G. Skinner | Zendy; D. P. Coupal | Zendy; T. Pal | Zendy

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Temperature dependence of the radiation induced change of depletion voltage in silicon PIN detectors

Author(s) -

H. J. Ziock,

K. Holzscheiter,

A.N. Morgan,

A. P. T. Palounek,

J. Ellison,

A. P. Heinson,

Mark E. Mason,

Stephen Wimpenny,

E. Barberis,

N. Cartiglia,

A. A. Grillo,

K.F. O'Shaughnessy,

J. T. Rahn,

Paolo Rinaldi,

W.A. Rowe,

H. F-W. Sadrozinski,

A. Seiden,

E. Spencer,

A. Webster,

R. Wichmann,

M. Wilder,

M. Frautschi,

J. Matthews,

Donald McDonald,

Donald G. Skinner,

D. P. Coupal,

T. Pal

Publication year - 1993

Language(s) - English

Resource type - Reports

DOI - 10.2172/10193797

Subject(s) - radiation damage , silicon , fluence , annealing (glass) , radiation , irradiation , materials science , atmospheric temperature range , depletion region , detector , physics , particle detector , nuclear physics , atomic physics , optoelectronics , optics , semiconductor , meteorology , composite material

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