Open AccessTemperature dependence of the radiation induced change of depletion voltage in silicon PIN detectors
Author(s) -
H. Ziock,
K. Holzscheiter,
A.N. Morgan,
A. P.T. Palounek,
J. Ellison,
A. P. Heinson,
Mark E. Mason,
S. Wimpenny,
E. Barberis,
N. Cartiglia
Publication year - 1993
Language(s) - English
Resource type - Reports
DOI - 10.2172/10193797
Subject(s) - radiation damage , silicon , fluence , annealing (glass) , radiation , irradiation , materials science , atmospheric temperature range , depletion region , detector , physics , particle detector , nuclear physics , atomic physics , optoelectronics , optics , semiconductor , meteorology , composite material