Open AccessLocalized excitations in amorphous silicon alloys. Final report
Publication year - 1987
Language(s) - Slovenian
Resource type - Reports
DOI - 10.2172/10184779
Subject(s) - dopant , materials science , band gap , silicon , doping , impurity , tin , amorphous silicon , valence band , valence (chemistry) , amorphous solid , fermi level , condensed matter physics , chemical bond , atomic physics , molecular physics , crystallography , chemistry , crystalline silicon , optoelectronics , electron , physics , metallurgy , organic chemistry , quantum mechanics
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