Open AccessIon beam synthesis of SiGe alloy layers
Author(s) -
Seongil Im
Publication year - 1994
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - Uncategorized
Resource type - Reports
DOI - 10.2172/10165796
Subject(s) - materials science , alloy , stacking , stacking fault , ion implantation , annealing (glass) , wafer , molecular beam epitaxy , dislocation , epitaxy , ion beam , crystallography , ion , optoelectronics , analytical chemistry (journal) , layer (electronics) , composite material , chemistry , organic chemistry , chromatography
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