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Safety issues for hydrogen-powered vehicles
Author(s) -
J.T. Ringland
Publication year - 1994
Language(s) - English
Resource type - Reports
DOI - 10.2172/10136126
Subject(s) - annihilation , positron annihilation , positron annihilation spectroscopy , semiconductor , crystallographic defect , spectroscopy , range (aeronautics) , materials science , optoelectronics , nanotechnology , engineering physics , chemical physics , positron , physics , nuclear physics , condensed matter physics , quantum mechanics , electron , composite material
Positron annihilation spectroscopy of overlayers, interfaces, and buried regions of semiconductors has seen a rapid growth in recent years. The characteristics of the annihilation gamma rays depend strongly on the local environment of the annihilation sites, and can be used to probe defect concentrations in a range inaccessible to conventional defect probes. Some of the recent success of the technique in examining low concentrations of point defects in technologically important Si-based structures is discussed.

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