Open AccessIon mixing of semiconductor layered-structures. Technical progress report, February 1, 1991--January 31, 1992
Author(s) -
S. S. Lau,
J. W. Mayer,
B. D. Hall
Publication year - 1992
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - Uncategorized
Resource type - Reports
DOI - 10.2172/10122434
Subject(s) - mixing (physics) , ion , semiconductor , superlattice , ion beam mixing , materials science , semiconductor device , dopant , ion implantation , intrinsic semiconductor , optoelectronics , fabrication , chemistry , doping , nanotechnology , ion beam , ion beam deposition , physics , medicine , alternative medicine , organic chemistry , layer (electronics) , quantum mechanics , pathology
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