z-logo
open-access-imgOpen Access
Stability and precipitation kinetics in Si{sub 1{minus}y}C{sub y}/Si and Si{sub 1{minus}x{minus}y}Ge{sub x}C{sub y}/Si heterostructures prepared by solid phase epitaxy
Author(s) -
J. Strane,
S T Picraux,
H J Stein,
S R Lee,
J Candelaria,
D. Theodore,
J. W. Mayer
Publication year - 1993
Language(s) - English
Resource type - Reports
DOI - 10.2172/10122228
Subject(s) - heterojunction , annealing (glass) , crystallography , nucleation , materials science , transmission electron microscopy , x ray crystallography , epitaxy , analytical chemistry (journal) , silicon , diffraction , chemistry , nanotechnology , physics , optics , layer (electronics) , chromatography , metallurgy , optoelectronics , organic chemistry , composite material

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here