Open AccessStability and precipitation kinetics in Si{sub 1{minus}y}C{sub y}/Si and Si{sub 1{minus}x{minus}y}Ge{sub x}C{sub y}/Si heterostructures prepared by solid phase epitaxy
Author(s) -
J. Strane,
S. T. Picraux,
H. J. Stein,
S. R. Lee,
J. Candelaria,
D. Theodore,
J. W. Mayer
Publication year - 1993
Language(s) - English
Resource type - Reports
DOI - 10.2172/10122228
Subject(s) - heterojunction , annealing (glass) , crystallography , nucleation , materials science , transmission electron microscopy , x ray crystallography , epitaxy , analytical chemistry (journal) , silicon , diffraction , chemistry , nanotechnology , physics , optics , layer (electronics) , chromatography , metallurgy , optoelectronics , organic chemistry , composite material
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