Open AccessIonizing radiation effects on silicon test structures
Author(s) -
H.W. Kraner,
R. Beuttenmuller,
W. Chen,
J.A. Kierstead,
Zhongjuan Li,
Y. Zhang,
L. Dou,
E. Fretwurst,
G. Lindstroem
Publication year - 1993
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - Uncategorized
Resource type - Reports
DOI - 10.2172/10119896
Subject(s) - annealing (glass) , irradiation , optoelectronics , materials science , diode , silicon , oxide , detector , p–n junction , analytical chemistry (journal) , leakage (economics) , capacitor , radiation , depletion region , optics , voltage , electrical engineering , physics , chemistry , semiconductor , nuclear physics , chromatography , economics , metallurgy , composite material , macroeconomics , engineering
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