Open AccessOriented Si and Ge nanocrystals formed in Al{sub 2}O{sub 3} by ion implantation and annealing
Author(s) -
C.W. White,
J. D. Budai,
S. P. Withrow,
S. J. Pennycook,
Daowei Zhou,
ThiHien Dinh,
D. M. Hembree,
R.H. Magruder
Publication year - 1993
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/10116770
Subject(s) - nanocrystal , annealing (glass) , ion implantation , materials science , germanium , ion , crystallography , nanotechnology , silicon , mineralogy , chemistry , metallurgy , organic chemistry
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