Open AccessUltra-smooth dry etching of GaAs using a hydrogen plasma pretreatment
Author(s) -
R . J. Shul,
K.D. Choquette,
A.J. Howard,
D.J. Rieger,
C.A. DiRubio,
R.S. Freund,
R.C. Wetzel
Publication year - 1993
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/10115207
Subject(s) - etching (microfabrication) , plasma , hydrogen , dry etching , oxide , plasma etching , surface roughness , surface finish , materials science , reactive ion etching , analytical chemistry (journal) , morphology (biology) , chemistry , nanotechnology , composite material , metallurgy , layer (electronics) , chromatography , physics , geology , paleontology , organic chemistry , quantum mechanics
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