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Kinetic modeling of the atomic layer epitaxy window in group IV semiconductor growth
Author(s) -
Gyula Eres
Publication year - 1995
Language(s) - English
Resource type - Reports
DOI - 10.2172/10113197
Subject(s) - chemisorption , atomic layer epitaxy , kinetic energy , semiconductor , epitaxy , window (computing) , layer (electronics) , materials science , group (periodic table) , atomic physics , physics , chemistry , nanotechnology , optoelectronics , adsorption , quantum mechanics , computer science , operating system

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