Contactless Mobility, Carrier Density, and Sheet Resistance Measurements on Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers | Zendy

Randy P. Tompkins | Zendy; Danh Cong Nguyen | Zendy

Open Access

Contactless Mobility, Carrier Density, and Sheet Resistance Measurements on Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers

Author(s) -

Randy P. Tompkins,

Danh Cong Nguyen

Publication year - 2015

Language(s) - English

Resource type - Reports

DOI - 10.21236/ada618164

Subject(s) - high electron mobility transistor , materials science , optoelectronics , transistor , wafer , electron mobility , wide bandgap semiconductor , gallium nitride , sheet resistance , nanotechnology , electrical engineering , layer (electronics) , engineering , voltage

: This technical report examines sheet-resistance and Hall-effect results when using a Lehighton Electronics Inc. Model 1605B contactless mobility system. This report gives results on multiple samples including 4-inch, n-type Si; multiple AlGaN/GaN High Electron Mobility Transistor (HEMT) structures grown on SiC substrates; and an unintentionally doped (UID) GaN on sapphire template.

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