10kW TWT Transition to GaN IRE

: The purpose of this Internal Rapid Experimentation (IRE) is to develop a Gallium Nitride (GaN) replacement for 10kW Traveling Wave Tube (TWT). A phased approach will be used to develop a solid state replacement for the TWT. Phase I covered by this IRE, was to do market research on commercially available GaN transistors as a substitute for traveling wave tubes in high power radar and Electronic Warfare (EW) applications. GaN transistors, using evaluation boards, were tested and analyzed, supplementing and compared against the data found on the vendor s data sheet. Using vendor models of selected transistors, an initial design approach and architecture was developed using Keysight ADS software. Simulations were run for comparison against vendor data sheets and the test data collected.