Optimization of Thick Negative Photoresist for Fabrication of Interdigitated Capacitor Structures | Zendy

Erik Enriquez | Zendy; David I. Shreiber | Zendy; E. Ngo | Zendy; M. Ivill | Zendy; Soeren Hirsch | Zendy; C. Hubbard | Zendy; M. W. Cole | Zendy

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Optimization of Thick Negative Photoresist for Fabrication of Interdigitated Capacitor Structures

Author(s) -

Erik Enriquez,

David I. Shreiber,

E. Ngo,

M. Ivill,

Soeren Hirsch,

C. Hubbard,

M. W. Cole

Publication year - 2015

Language(s) - English

Resource type - Reports

DOI - 10.21236/ada615865

Subject(s) - photoresist , fabrication , capacitor , materials science , optoelectronics , nanotechnology , electrical engineering , engineering , voltage , medicine , alternative medicine , pathology , layer (electronics)

: Investigations were conducted in the optimization of a lift-off photolithography technique using thick negative photoresist (PR) NR9-8000 to achieve and optimize micron-scale interdigitated capacitor (IDC) structures by lift-off process for use in high-frequency electrical characterization measurements. Target feature resolution was in the range of 3 20 m, with PR thickness in the range of 6 20 m. Systematic deviations were made from manufacturer-recommended PR processing conditions to investigate a processing-structure relationship for optimizing of IDC fabrication including PR response to manipulation of substrate material, spin-speed, postexposure bake, exposure dose, and development process conditions. Postexposure bake temperature was found to be the most sensitive and critical parameter for the optimization of PR structures.

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