Low Temperature Photoluminescence (PL) from High Electron Mobility Transistors (HEMTs) | Zendy

Adam Roberts | Zendy; Henry O. Everitt | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Low Temperature Photoluminescence (PL) from High Electron Mobility Transistors (HEMTs)

Author(s) -

Adam Roberts,

Henry O. Everitt

Publication year - 2015

Language(s) - English

Resource type - Reports

DOI - 10.21236/ada614121

Subject(s) - photoluminescence , optoelectronics , transistor , materials science , high electron mobility transistor , electron , induced high electron mobility transistor , electrical engineering , physics , engineering , voltage , nuclear physics

: The purpose of this report is to investigate the low temperature Photoluminescence (PL) from High Electron Mobility Transistor (HEMT) structures that have been modified by proton irradiation. The samples are aluminum gallium nitride (AlGaN)/gallium nitride (GaN) and indium aluminum nitride (InAlN)/GaN HEMT structures. These samples were cooled to 13 K and excited with Continuous Wave (CW) lasers at 325 and 244 nanometers to look for PL originating from a Two-Dimensional Electron Gas (2DEG).

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research