Open AccessFabrication of High-Voltage Bridge Rectifier Modules for Pulse Power Applications
Author(s) -
Dimeji Ibitayo,
Gail Koebke,
Damian Urciuoli,
C. W. Tipton
Publication year - 2014
Language(s) - English
Resource type - Reports
DOI - 10.21236/ada609891
Subject(s) - half bridge , fabrication , rectifier (neural networks) , electrical engineering , bridge (graph theory) , voltage , materials science , power (physics) , optoelectronics , high voltage , engineering , computer science , capacitor , physics , medicine , alternative medicine , stochastic neural network , pathology , quantum mechanics , machine learning , recurrent neural network , artificial neural network
: Fifteen-kV full-bridge rectifier modules are a custom component developed and fabricated by the US Army Research Laboratory (ARL) in order to demonstrate 15 kV, 3-A, and 6-A silicon carbide (SiC) junction barrier Schottky rectifier modules in application circuits. Such high voltage, high-speed rectifiers help reduce power conversion volume while increasing efficiency. This development also serves to identify challenges associated with high voltage semiconductor packaging. The SiC junction-barrier Schottky (JBS) diodes used in the module were state-of-the-art devices developed and fabricated by CREE Inc. under the Defense Advanced Research Projects Agency s Wide Bandgap Semiconductor Technology Initiative. The 3-A rated die are 8 mm 8 mm in total area, and the 6-A rated die are 10 mm 10 mm.
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