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Advanced Plasma Etching of Complex Combinations of III-V Heterostructures
Author(s) -
L. A. Kolodziejski,
Erich P. Ippen
Publication year - 2008
Language(s) - English
Resource type - Reports
DOI - 10.21236/ada495071
Subject(s) - etching (microfabrication) , plasma , plasma etching , heterojunction , materials science , optoelectronics , nanotechnology , physics , nuclear physics , layer (electronics)
: The optoelectronic structures and devices, whose study will be enabled by the acquired research instrumentation, including ultra-broadband modulators, photonic crystal lasers, and very fast optical logic circuits, are of intense interest for future Air Force needs. The objective of the research instrumentation acquisition is to enhance the institution's ability to study III-V semiconductor materials and devices. An inductively-coupled plasma reactive-ion etcher will be acquired for sophisticated, on-site fabrication of photonic and optoelectronic devices with novel III-V heterostructures.

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