Open AccessTHE INFLUENCE OF DEVICE GEOMETRY ON THE PARTIALLY DEPLETED SOI TRANSISTOR TID HARDNESS
Author(s) -
Ivan I. Shvetsov-Shilovskiy,
Anatoly A. Smolin,
Pavel V. Nekrasov,
Anastasia V. Ulanova,
А. И. Никифоров
Publication year - 2016
Publication title -
radiation and application
Language(s) - English
Resource type - Journals
ISSN - 2466-4294
DOI - 10.21175/radj.2016.01.04
Subject(s) - silicon on insulator , materials science , geometry , mathematics , optoelectronics , silicon