Characteristics and Mechanism of Catalyst-Referred Etching Method: Application to 4H-SiC | Zendy

Pho Van Bui | Zendy; Yasuhisa Sano | Zendy; Yoshitada Morikawa | Zendy; Kazuto Yamauchi | Zendy

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Characteristics and Mechanism of Catalyst-Referred Etching Method: Application to 4H-SiC

Author(s) -

Pho Van Bui,

Yasuhisa Sano,

Yoshitada Morikawa,

Kazuto Yamauchi

Publication year - 2018

Publication title -

international journal of automation technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.513

H-Index - 18

eISSN - 1883-8022

pISSN - 1881-7629

DOI - 10.20965/ijat.2018.p0154

Subject(s) - chemical mechanical planarization , polishing , materials science , etching (microfabrication) , catalysis , substrate (aquarium) , work (physics) , abrasive , isotropic etching , mechanism (biology) , chemical engineering , engraving , nanotechnology , metallurgy , composite material , mechanical engineering , chemistry , layer (electronics) , engineering , organic chemistry , oceanography , geology , philosophy , epistemology

A novel abrasive-free planarization method named catalyst-referred etching (CARE) was developed. A polishing pad is coated with a catalytic material to promote chemical etching of the work substrate. During processing, the topmost areas of the work substrate, which are in contact with the catalyst surface, are selectively etched off. Atomically highly ordered surfaces are obtained for many types of work substrates. In this paper, the removal characteristics and mechanism of CARE for single crystalline 4H-SiC are reviewed.

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