z-logo
open-access-imgOpen Access
Thermodynamic Study of Boron Oxidation in Metallurgical Grade Silicon Purifying Through Plasma Melting
Author(s) -
Paulo Roberto Mei,
Matheus Aquilini
Publication year - 2015
Publication title -
anais do congresso de iniciação científica da unicamp
Language(s) - English
Resource type - Conference proceedings
ISSN - 2447-5114
DOI - 10.19146/pibic-2015-37660
Subject(s) - boron , silicon , plasma , metallurgy , materials science , melting temperature , chemistry , composite material , physics , organic chemistry , quantum mechanics
Understanding the great variety of applications of silicon based photovoltaic solar panels and verifying that the cost of the silicon used on them is responsible for up to 70% 1 of the total production cost, the group was motivated to develop a route to purify 99% pure silicon up to 99,999% (purity needed for this application). To accomplish this, the rather impure silicon will be treated with a electron beam under high vacuum followed by a second purification step using inductively coupled argon plasma combined with different proportions of reactive gases H2O, O2 and H2 , seeking a cheaper and reliable way to produce the high purity silicon needed for the photovoltaic industry.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom