Integration of Nano Scale Electronic Devices into Undergraduate Electrical Engineering Curricula
Author(s) -
Hasina F. Huq
Publication year - 2020
Publication title -
2011 asee annual conference & exposition proceedings
Language(s) - English
Resource type - Conference proceedings
DOI - 10.18260/1-2--18271
Subject(s) - curriculum , electronics , scale (ratio) , computer science , engineering education , nanoscopic scale , engineering management , nanotechnology , electrical engineering , engineering , materials science , physics , psychology , pedagogy , quantum mechanics
As deep-sub-micron and beyond technology emerges; integration of nano scale devices into undergraduate curricula becomes more important than ever. This paper addresses issues related to increasing impact of the nano electronics on undergraduate education in electrical and computer engineering courses. The purpose of the research is to present the class behavior, lessons learned, possible challenges and recommendations that may be used to promote simulation based learning and also the use of nano scale devices in electrical and computer engineering courses. The integration of simulation based learning (using simulation tools available at nanoHUB.org) helps the students to understand the nano devices concept. There is a strong need for well-educated nano electronics device design engineers and therefore, undergraduate-level training efforts are essential to meet future challenges related to nanotechnology. So the paper proposes a suitable educational topic for undergraduate VLSI course in electrical and computer engineering program. The assessment results not only show that learning indeed occurs during lab sessions, but almost equally as much (45%) as in lectures (55%). Also, it is observed that even students, who have no prior experience in nano scale devices, benefit from the simulation tools available in nanoHUB.org and incorporate the concept of nano scale devices in VLSI curriculum. Each student team develops a nanoscale MOSFET structure and simulates them for their I-V characteristics. The critical parameters are doping concentration, materials properties, oxide thickness and aspect ratios (W/L). Then they have compared and analyzed their results with micro level devices. Thus, the students not only understand design issues at the nano scale level, but also experience the impact of design decisions at the device levels. Introduction of nano devices in VLSI curricula also help the students learn nano technology.
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