NUMERICAL CALCULATIONS OF IMPURITY SCATTERING MOBILITY IN SEMICONDUCTORS | Zendy

Z. Chubinishvili | Zendy; R. Kobaidze | Zendy; Elza Khutsishvili | Zendy; N. Kekelidze | Zendy

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NUMERICAL CALCULATIONS OF IMPURITY SCATTERING MOBILITY IN SEMICONDUCTORS

Author(s) -

Z. Chubinishvili,

R. Kobaidze,

Elza Khutsishvili,

N. Kekelidze

Publication year - 2019

Publication title -

european chemical bulletin

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.131

H-Index - 5

ISSN - 2063-5346

DOI - 10.17628/ecb.2019.8.19-22

Subject(s) - semiconductor , current (fluid) , impurity , scattering , electron mobility , materials science , carrier scattering , ionized impurity scattering , charge carrier , impact ionization , range (aeronautics) , semiconductor device , carrier lifetime , condensed matter physics , optoelectronics , computational physics , ionization , nanotechnology , physics , optics , thermodynamics , silicon , quantum mechanics , ion , layer (electronics) , composite material

Novel semiconductor-base nanotechnology is gradually moving into new applications in the world economy. Semiconductor application requires increasing of investigations in the direction of their properties. The main criterion of semiconductor suitability for application in semiconductor devices is its electrical properties, particularly current carriers mobility. Therefore, the problem connected with the explanation of the experimental results of current carriers mobility on the base of theoretical complicated formulas is very urgent. In the current paper current carriers mobility due to ionized impurity scattering is discussed and calculated using numerical methods. Calculations have been done for different temperatures and different range of current carriers concentration in InAs case.

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