Open AccessFine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC
Author(s) -
V. A. Joshkin,
C. A. Parker,
S. M. Bedair,
L. Y. Krasnobaev,
J. J. Cuomo,
R. F. Davis,
A. Suvkhanov
Publication year - 1998
Publication title -
carolina digital repository (university of north carolina at chapel hill)
Language(s) - English
DOI - 10.17615/c2j6-8s67
Subject(s) - photoluminescence , enhanced data rates for gsm evolution , irradiation , materials science , optoelectronics , wide bandgap semiconductor , computer science , physics , telecommunications , nuclear physics