Open AccessDead layer on silicon p–i–n diode charged-particle detectors
Author(s) -
B.L. Wall,
J.F. Amsbaugh,
A. Beglarian,
T. Bergmann,
H.C. Bichsel,
L.I. Bodine,
N.M. Boyd,
T.H. Burritt,
Z. Chaoui,
T.J. Corona,
P.J. Doe,
S. Enomoto,
F. Harms,
G.C. Harper,
M.A. Howe,
E.L. Martin,
D.S. Parno,
D.A. Peterson,
L. Petzold,
P. Renschler,
R.G.H. Robertson,
J. Schwarz,
M. Steidl,
Van Wechel,
B.A. VanDevender,
S. Wüstling,
K.J. Wierman,
J.F. Wilkerson
Publication year - 2014
Publication title -
carolina digital repository (university of north carolina at chapel hill)
Language(s) - Uncategorized
DOI - 10.17615/3r0s-wm64
Subject(s) - silicon , detector , layer (electronics) , diode , particle (ecology) , optoelectronics , materials science , physics , charged particle , optics , nanotechnology , ion , geology , oceanography , quantum mechanics