z-logo
open-access-imgOpen Access
Electronic and Optical Properties of Aluminum Oxide Before and After Surface Reduction by Ar<sup>+</sup> Bombardment
Author(s) -
Dahlang Tahir,
H. J. Kang,
S. Tougaard
Publication year - 2014
Publication title -
atom indonesia
Language(s) - English
Resource type - Journals
eISSN - 2356-5322
pISSN - 0126-1568
DOI - 10.17146/aij.2014.273
Subject(s) - sputtering , electron energy loss spectroscopy , atomic physics , materials science , reflection (computer programming) , spectral line , band gap , spectroscopy , analytical chemistry (journal) , irradiation , thin film , chemistry , optoelectronics , physics , nanotechnology , computer science , nuclear physics , transmission electron microscopy , chromatography , quantum mechanics , astronomy , programming language
The electronic and optical properties of a -Al 2 O 3 after induced by 3-keV Ar + sputtering  have been studied quantitatively by use of reflection electron energy loss spectroscopy (REELS) spectra. The band gap values of a -Al 2 O 3 was determined from the onset values of the energy loss spectrum to the background level of REELS spectra as a function of time Ar + bombardment. The bandgap changes from 8.4 eV before sputtering to 6.2 eV after 4 minutes of sputtering. The optical properties of α -Al 2 O 3 thin films have been determined by comparing the experimental cross section obtained from reflection electron energy loss spectroscopy with the theoretical inelastic scattering cross section, deduced from the simulated energy loss function (ELF) by using QUEELS-e(k)-REELS software. The peak assignments are based on ELF and compared with reported data on the electronic structure of α -Al 2 O 3 obtained using different techniques. The results demonstrate that the electronic and optical properties before and after surface reduction will provide further understanding in the fundamental properties of  α -Al 2 O 3 which will be useful in the design, modeling and analysis of devices applications performance. Normal 0 false false false IN X-NONE X-NONE /* Style Definitions */ table.MsoNormalTable {mso-style-name:"Table Normal"; mso-tstyle-rowband-size:0; mso-tstyle-colband-size:0; mso-style-noshow:yes; mso-style-priority:99; mso-style-parent:""; mso-padding-alt:0cm 5.4pt 0cm 5.4pt; mso-para-margin-top:0cm; mso-para-margin-right:0cm; mso-para-margin-bottom:10.0pt; mso-para-margin-left:0cm; line-height:115%; mso-pagination:widow-orphan; font-size:11.0pt; font-family:"Calibri","sans-serif"; mso-ascii-font-family:Calibri; mso-ascii-theme-font:minor-latin; mso-hansi-font-family:Calibri; mso-hansi-theme-font:minor-latin; mso-fareast-language:EN-US;} Received: 18 November 2013; Revised:12 June 2014; Accepted: 25 June 2014

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom