A 1.8 V 0.918 ppm/°C CMOS bandgap voltage reference with curvature-compensated | Zendy

Gao Pan | Zendy; Qing Hua | Zendy; Bo Zhang | Zendy

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A 1.8 V 0.918 ppm/°C CMOS bandgap voltage reference with curvature-compensated

Author(s) -

Gao Pan,

Qing Hua,

Bo Zhang

Publication year - 2019

Publication title -

ieice electronics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.178

H-Index - 36

eISSN - 1349-9467

pISSN - 1349-2543

DOI - 10.1587/elex.16.20190616

Subject(s) - bandgap voltage reference , line regulation , voltage reference , temperature coefficient , voltage , compensation (psychology) , cmos , materials science , optoelectronics , electrical engineering , silicon bandgap temperature sensor , dropout voltage , engineering , psychology , psychoanalysis

A new precise current mode bandgap voltage reference with TlnT compensation of non-linear temperature is proposed. By using the voltage difference of two transistors working in different current states, the nonlinear compensation term of TlnT is generated. At the same time, the optimal high-precision reference voltage source is obtained by using the method of piecewise compensation. This design with 0.18μm CMOS process is achieved an ultra-low temperature coefficient (TC) of 0.918 ppm/°C from −40 °C to 125 °C. The minimum required supply voltage is 1.8V and the current consumption is 23 μA at 25 °C. And the line regulation performance is 0.0055%/V at 25 °C with a supply voltage range of 1.8V to 3.6V. key words: bandgap voltage reference, TlnT, temperature coefficient Classification: Integrated circuits

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