High-performance compound-semiconductor integrated circuits for advanced digital coherent optical communications systems | Zendy

Munehiko Nagatani | Zendy; Hideyuki Nosaka | Zendy

Open Access

High-performance compound-semiconductor integrated circuits for advanced digital coherent optical communications systems

Author(s) -

Munehiko Nagatani,

Hideyuki Nosaka

Publication year - 2016

Publication title -

ieice electronics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.178

H-Index - 36

eISSN - 1349-9467

pISSN - 1349-2543

DOI - 10.1587/elex.13.20162003

Subject(s) - electronic engineering , transimpedance amplifier , optical communication , converters , electronic circuit , broadband , photonics , analogue electronics , optical transistor , heterojunction bipolar transistor , computer science , transceiver , photonic integrated circuit , electrical engineering , amplifier , engineering , telecommunications , cmos , transistor , bipolar junction transistor , operational amplifier , optoelectronics , physics , voltage

Communications traffic over photonic networks is exponentially increasing due to the spread of broadband applications. To cope with the rapid growth, novel 100-Gb/s digital coherent systems have been deployed recently in optical core networks. Further research and development of digital coherent technologies with channel rates of beyond 100Gb/s is now being conducted. Optical transceivers for such high-speed communications systems need high-performance analog and mixed-signal electronic circuits such as optical modulator drivers, transimpedance amplifiers (TIAs), analog-to-digital converters (ADCs), and digital-to-analog converters (DACs). Compound-semiconductor integrated circuits (ICs) have played key roles in this technical field. This paper reviews recent trends in compound-semiconductor ICs for such advanced digital coherent optical communications systems and presents our latest results based on InP heterojunction bipolar transistor (HBT) technology.

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