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Ionisation tracks on CMOS circuits produce the so called Single Event Effects (SEE). Measuring the absorbed energy per event in the micro-structures of an integrated circuit is difficult; therefore a Monte Carlo simulation can be useful. In this work, we present GEANT4 applications to simulate the incidence of charged particles on a CMOS flipflop designed according to AMISC5 rules. The energy per event absorbed in the flip-flop transistors is calculated for the panoply of beams available at CNA (Spanish National Accelerator Centre): proton (18 MeV) and deuteron (9 MeV) beams produced by an IBA Cyclotron, and ion beams produced by a 3-MV NEC Pelletron accelerator (9 MeV alphas, 15 MeV carbon ions and 18 MeV oxygen ions).

GEANT4 Microdosimetry Study of Ionising Radiation Effects in Digital ASIC’s